HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6003
Issued Date : 1994.10.04
Revised Date : 2002.04.03
Page No. : 1/4
HJ2955
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ2955 is designed for general purpose of amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-252
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 20 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -60 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current ........................................................................................................... -10 A
IB Base Current .................................................................................................................... -6 A
Characteristics
(Ta=25°C)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
ICEX
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
fT
Min.
-60
-70
-5
-
-
-
-
-
-
-
20
5
2
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-20
-20
-50
-0.5
-1.1
-8
-1.8
100
-
-
Unit
V
V
V
uA
uA
uA
mA
V
V
V
Test Conditions
IC=-30mA, IB=0
IC=-1mA, IE=0
IE=-1mA, IC=0
VCB=-70V, IE=0
VCE=-70V, VEB(off)=-1.5V
VCE=-30V, IB=0
VEB=-5V, IC=0
IC=-4A, IB=-400mA
IC=-10A, IB=-3.3A
IC=-4A, VCE=-4V
IC=-4A, VCE=-4V
IC=-10A, VCE=-4V
VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HJ2955
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
