HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6008
Issued Date : 1996.04.12
Revised Date : 2002.04.18
Page No. : 1/3
HJ350
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ350 is designed for line operated audio output amplifier,
switch mode power supply drivers and other switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-252
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 15 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -300 V
BVCEO Collector to Emitter Voltage................................................................................. -300 V
BVEBO Emitter to Base Voltage........................................................................................... -3 V
IC Collector Current....................................................................................................... -500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*hFE
Min.
-300
-300
-3
-
-
30
Typ.
-
-
-
-
Max.
-
-
-
-100
-100
240
Unit
V
V
V
uA
uA
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-0.1mA, IC=0
VCB=-300V, IE=0
VEB=-3V, IC=0
VCE=-10V, IC=-50mA
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HJ350
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
