HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6021-B
Issued Date : 1996.04.15
Revised Date : 2000.11.01
Page No. : 1/3
HJ3953
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High-definition CRT display video output, wide-band amp,
Features
•
High fT: fT =400MHz
•
High breakdown voltage: VCEO=120V (min)
•
Small reverse transfer capacitance and excellent HF response
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................... 1.3 W
•
Maximum Voltages and Currents
BVCEO Collector to Emitter Voltage................................................................................. 120 V
BVCBO Collector to Emitter Voltage................................................................................. 120 V
BVEBO Emitter to Base Voltage ........................................................................................... 3 V
IC Collector Current (DC)............................................................................................... 200 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
120
120
3
-
-
-
-
60
40
400
2.1
Typ.
-
-
-
-
-
-
-
160
-
-
-
Max.
-
-
-
100
100
1
1
320
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=80V, IE=0
VEB=2V, IC=0
IC=30mA, IB=3mA
IC=30mA, IB=3mA
VCE=10V, IC=10mA
VCE=10V, IC=100mA
VCE=10V, IC=50mA
VCB=30V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE1
Rank
Range
D
60-120
E
100-200
F
160-320
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
