HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.04.03
Page No. : 1/3
HJ649A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ649A is designed for low frequency power amplifier.
Absolute Maximum Ratings
(Ta=25°C)
TO-252
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -180 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current........................................................................................................... -1.5 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-180
-160
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-1mA
IC=-10mA
IE=-1mA
VCB=-160V
IC=-500mA, IB=-50mA
VCE=-5V,IC=-150mA
VCE=-5V,IC=-150mA
VCE=-5V,IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
HJ649A
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
