HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830-A
Issued Date : 1994.01.25
Revised Date : 2000.11.01
Page No. : 1/2
HJ669A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ669A is designed for low frequency power amplifier.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ...................................................................................... 1 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 180 V
BVCEO Collector to Emitter Voltage................................................................................. 160 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ........................................................................................................... 1.5 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
180
160
5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
14
Max.
-
-
-
10
1
1.5
200
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=1mA
IC=10mA
IC=1mA
VCB=160V
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCE=5V, IC=500mA
VCE=5V, IC=500mA
VCB=10V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
HSMC Product Specification