HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6014
Issued Date : 1996.04.12
Revised Date : 2003.01.07
Page No. : 1/4
HJ882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ882 is designed for using in output stage of 20 W audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings
(Ta=25°C)
TO-252
•
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................................................ +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 10 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................................. 40 V
BVCEO Collector to Emitter Voltage ............................................................................................... 30 V
BVEBO Emitter to Base Voltage ....................................................................................................... 5 V
IC Collector Current (DC)................................................................................................................... 3 A
IC Collector Current (Pulse)............................................................................................................... 7 A
IB Base Current (DC).................................................................................................................. 600 mA
Thermal Characteristic
Characteristic
Thermal Resistance, junction to case
Symbol
Rθjc
Max
12.5
Unit
o
C/W
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
30
5
-
-
-
-
30
160
-
-
Typ.
-
-
-
-
-
0.3
1
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
400
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE1
Rank
Range
Q
100-200
P
160-320
E
250-500
HJ882
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
