HLB121I 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE9027

Issued Date : 1996.11.06

Revised Date : 2004.09.24

Page No. : 1/4

HLB121I

NPN Triple Diffused Planar Type High Voltage Transistor

Description

The HLB121I is a medium power transistor designed for use in switching

applications.

TO-251

Features

•

High breakdown voltage

•

Low collector saturation voltage

•

Fast switching speed

Absolute Maximum Ratings

(T

A

=25°C)

•

Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150

°C

Junction Temperature .................................................................................................................................... +150

°C

•

Maximum Power Dissipation

Total Power Dissipation (T

C

=25°C) .................................................................................................................... 10 W

•

Maximum Voltages and Currents

BV

CBO

Collector to Base Voltage....................................................................................................................... 600 V

BV

CEO

Collector to Emitter Voltage.................................................................................................................... 400 V

BV

EBO

Emitter to Base Voltage.............................................................................................................................. 6 V

I

C

Collector Current (DC) ............................................................................................................................... 300 mA

I

C

Collector Current (Pulse)............................................................................................................................ 600 mA

I

B

Base Current (DC)........................................................................................................................................ 40 mA

I

B

Base Current (Pulse).................................................................................................................................. 100 mA

Electrical Characteristics

(T

A

=25°C)

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

CEO

I

EBO

*V

CE(sat)1

*V

CE(sat)2

*V

BE(sat)

*h

FE1

*h

FE2

Min.

600

400

6

-

-

-

-

-

-

8

10

Typ.

-

-

-

-

-

-

-

-

-

-

-

Max.

-

-

-

10

10

10

400

750

1

-

36

Unit

V

V

V

uA

uA

uA

mV

mV

V

I

C

=100uA

I

C

=10mA

I

E

=10uA

V

CB

=550V

V

CB

=400V

V

EB

=6V

I

C

=50mA, I

B

=10mA

I

C

=100mA, I

B

=20mA

I

C

=50mA, I

B

=10mA

V

CE

=10V, I

C

=10mA

V

CE

=10V, I

C

=50mA

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Test Conditions

HLB121I

HSMC Product Specification