HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6027
Issued Date : 1996.11.11
Revised Date : 2001.05.01
Page No. : 1/3
HLB121J
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121J is a medium power transistor designed for use in
switching applications.
Features
•
High breakdown voltage
•
Low collector saturation voltage
•
Fast switching speed
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 10 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 600 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage ........................................................................................... 6 V
IC Collector Current (DC)............................................................................................... 300 mA
IC Collector Current (Pulse)........................................................................................... 600 mA
IB Base Current (DC)....................................................................................................... 40 mA
IB Base Current (Pulse)................................................................................................. 100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
Min.
600
400
6
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
650
-
10
10
10
400
750
1
-
36
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
IC=100uA
IC=10mA
IE=10uA
VCB=550V
VCB=400V
VEB=6V
IC=50mA, IB=10mA
IC=100mA, IB=20mA
IC=50mA, IB=10mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HLB121J
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
