HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200206
Issued Date : 2002.05.01
Revised Date : 2005.08.16
Page No. : 1/4
HLB122D
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122D is a medium power transistor designed for use in switching
applications.
Features
•
High breakdown voltage
•
Low collector saturation voltage
•
Fast switching speed
TO-126ML
Absolute Maximum Ratings
(T
A
=25°C)
•
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature .................................................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 10 W
•
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 600 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 400 V
BV
EBO
Emitter to Base Voltage.............................................................................................................................. 6 V
I
C
Collector Current (DC) ............................................................................................................................... 800 mA
I
C
Collector Current (Pulse).......................................................................................................................... 1600 mA
I
B
Base Current (DC)...................................................................................................................................... 100 mA
I
B
Base Current (Pulse).................................................................................................................................. 200 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)
*h
FE1
*h
FE2
tf
Min.
600
400
6
-
-
-
-
-
-
10
10
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
800
1
40
-
0.6
uS
Unit
V
V
V
uA
uA
uA
mV
mV
V
I
C
=100uA
I
C
=10mA
I
E
=10uA
V
CB
=600V
V
CE
=400V
V
EB
=6V
I
C
=100mA, I
B
=20mA
I
C
=300mA, I
B
=60mA
I
C
=100mA, I
B
=20mA
V
CE
=10V, I
C
=0.1A
V
CE
=10V, I
C
=0.5A
V
CC
=100V, I
C
=0.3A, I
B1
=-I
B2
=0.06A
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification of hFE1
Rank
Range
HLB122D
B1
10-17
B2
13-22
B3
18-27
B4
23-32
B5
28-37
B6
33-40
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
