HLB123I 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HI200202

Issued Date : 2002.06.01

Revised Date : 2002.06.10

Page No. : 1/4

HLB123I

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HLB123I is designed for high voltage. High speed switching inductive

circuits and amplifier applications.

Features

•

High Speed Switching

•

Low Saturation Voltage

•

High Reliability

TO-251

Absolute Maximum Ratings

(Ta=25°C)

•

Maximum Temperatures

Storage Temperature ........................................................................................................ -50 ~ +150

°C

Junction Temperature ................................................................................................ +150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (Tc=25°C)................................................................................................. 20 W

•

Maximum Voltages and Currents

BVCBO Collector to Base Voltage ................................................................................................. 600 V

BVCEO Collector to Emitter Voltage .............................................................................................. 400 V

BVEBO Emitter to Base Voltage ....................................................................................................... 8 V

IC Collector Current (DC) .................................................................................................................. 1 A

IC Collector Current (Pulse) .............................................................................................................. 2 A

Electrical Characteristics

(Ta=25°C)

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

*VCE(sat)1

*VCE(sat)2

*VBE(sat)1

*VBE(sat)2

*hFE1

*hFE2

*hFE3

Ton

Tstg

Toff

Min.

600

400

8

-

-

-

-

-

-

10

10

6

-

-

-

Typ.

-

-

-

-

-

-

-

-

-

-

-

-

0.4

2.4

0.3

Max.

-

-

-

10

10

0.8

0.9

1.2

1.8

50

-

-

1.1

4

0.7

Unit

V

V

V

uA

uA

V

V

V

V

Test Conditions

IC=1mA, IE=0

IC=10mA, IB=0

IE=1mA, IC=0

VCB=600V, IE=0

VBE=9V, IC=0

IC=0.1A, IB=10mA

IC=0.3A, IB=30mA

IC=0.1A, IB=10mA

IC=0.3A, IB=30Ma

IC=0.3A, VCE=5V

IC=0.5A, VCE=5V

IC=1A, VCE=5V

VCC=100V, IC=1A, IB1=IB2=0.2A

VCC=100V, IC=1A, IB1=IB2=0.2A

VCC=100V, IC=1A, IB1=IB2=0.2A

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

uS

uS

uS

Classification Of hFE1

Rank

Range

B1

10-17

B2

13-22

B3

18-27

B4

23-32

B5

28-37

B6

33-42

B7

38-47

B8

43-50

HLB123I

HSMC Product Specification