HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 1/4
HLB124E
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB124E is designed for high voltage, high speed switching inductive
circuits, and amplifier applications.
Features
•
High Speed Switching
•
Low Saturation Voltage
•
High Reliability
TO-220
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................................................ +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 35 W
•
Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage .............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC)................................................................................................................... 2 A
IC Collector Current (Pulse)............................................................................................................... 4 A
IB Base Current (DC)..........................................................................................................................1 A
IB Base Current (Pulse) ..................................................................................................................... 2 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Min.
600
400
8
-
-
-
-
-
-
10
10
6
15
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
0.3
0.8
0.9
1.2
40
-
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
IC=1mA
IC=10mA
IE=1mA
VCB=600V
VEB=9V, IC=0
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
VCE=5V, IC=0.3A
VCE=5V, IC=0.5A
VCE=5V, IC=1A
VCE=10V, IC=0.3, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
Classification of hFE1
Rank
Range
HLB124E
B1
10~17
B2
13~22
B3
18~27
B4
23~32
B5
28~37
B6
33~40
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
