HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HM200202
Issued Date : 2002.02.01
Revised Date : 2002.08.15
Page No. : 1/3
HM1300
SILICON PNP EPITAXIAL TYPE
Description
•
Strobo Flash Applications
•
Medium Power Amplifier Applications
Features
•
High DC Current Ogin and Excellanr hFE Linearity
•
hFE(1)=140-1000, (VCE=-1V, IC=-0.5A)
•
hFE(2)=60(Min.), (VCE=-1V, IC=-2A)
•
Low Saturation Voltage
•
VCE(sat)=-0.5V(Max.), (IC=-2A, IE=-50mA)
SOT-89
Absolute Maximum Ratings
(Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulsed
(Note1)
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Ratios
-20
-20
-10
-6
-2
-5
-0.2
1
150
-53~150
Unit
V
V
V
A
A
W
°C
°C
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note 1: Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)
Electrical Characteristics
(Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
V(BR)EBO
hFE(1)
(Note2)
*DC Current Gain
hFE(2)
*Collector – Emitter Saturation Voltage VCE(sat)
Base – Emitter Voltage
VBE
Cutoff Frequency
FT
Collector Output Capacitance
Cob
Characteristic
Collector Cut-off Current
Emitter Cut-off Current
Collector – Emitter Breakdown Voltage
Emitter – Base Breakdown Voltage
Test Condition
VCE=-20V, IE=0
VBE=-6V, IC=0
IC=10mA, IB=0
IE=-1mA, IC=0
VCE=-1V, IC=-0.5A
VCE=-1V, IC=-2A
IC=-2A, IB=-50mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-0.5A
VCE=-10V, IE=0,
F=1KHz
Min. Typ. Max. Unit
-
-
-100 nA
-
-
-100 nA
-10
-
-
V
-6
-
-
V
140
-
1000
60
-
-
-
-0.3 -0.5
V
- -0.83 -1.5
V
-
140
-
MHz
-
50
-
pF
Note 2: hFE(1) Classification Y:140~280, GR:200~400, BL:300~600, PE:500~1000
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HM1300
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
