HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6450
Issued Date : 1992.11.25
Revised Date : 2002.04.18
Page No. : 1/3
HM28S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM28S is a NPN silicon transistor, designed for use in general-purpose
SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier
applications.
Features
•
Excellent hFE Linearity
•
High DC Current Gain
•
High Power Dissipation
TO-92
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................. 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 850 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage..................................................................................................... 40 V
VCEO Collector to Emitter Voltage ................................................................................................. 20 V
VEBO Emitter to Base Voltage.......................................................................................................... 6 V
IC Collector Current ..................................................................................................................... 1.25 A
IB Base Current ............................................................................................................................. 0.4 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
hFE3
hFE4
fT
Cob
Min.
40
20
6
-
-
-
290
300
300
300
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
9
Max.
-
-
-
100
100
0.55
-
1000
-
-
-
-
Unit
V
V
V
nA
nA
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=35V, IE=0
VEB=6V, IC=0
IC=600mA, IB=20mA
VCE=1V, IC=1mA
VCE=1V, IC=0.1A
VCE=1V, IC=0.3A
VCE=1V, IC=0.5A
VCE=10V, IC=50mA, f=1MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification of hFE2
Rank
Range
HM28S
B
300-550
C
500-700
D
650-1000
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
