HM3669 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : Preliminary Data

Issued Date : 2000.07.01

Revised Date : 2000.07.01

Page No. : 1/3

HM3669

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM3669 is designed for using in power amplifier applications,

power switching application.

Absolute Maximum Ratings

(Ta=25°C)

•

Maximum Temperatures

Tstg Storage Temperature .................................................................................... -55 ~ +150

°C

Tj Junction Temperature ................................................................................................ +150

°C

•

Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W

•

Maximum Voltages and Currents

BVCBO Collector to Base Breakdown Voltage ................................................................... 80 V

BVCEO Collector to Emitter Breakdown Voltage ................................................................ 80 V

BVEBO Emitter to Base Emitter Breakdown Voltage............................................................ 5 V

IC Collector Current (DC)...................................................................................................... 2 A

Characteristics

(Ta=25°C)

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

*VCE(sat)

*VBE(sat)

*hFE

fT

Cob

Ton

Tstg

Tf

Min.

80

80

5

-

-

-

-

300

-

-

-

-

-

Typ.

-

-

-

-

-

0.15

0.9

-

100

30

0.2

1

0.2

Max.

-

-

-

1000

1000

0.5

1.2

-

-

-

-

-

-

Unit

V

V

V

nA

nA

V

V

MHz

pF

uS

uS

uS

Test Conditions

IC=100uA

IC=10mA

IE=100uA

VCB=80V

VEB=5V

IC=1A, IB=50mA

IC=1A, IB=50mA

VCE=2V, IC=500mA

VCE=2V, IC=500mA

VCB=10V, f=1MHz

IB1=-IB2=50mA, Duty Cycle 1%

*Pulse Test : Pulse Width

≤380us,

Duty Cycle≤2%

HSMC Product Specification