HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9503
Issued Date : 1996.04.09
Revised Date : 2002.08.27
Page No. : 1/4
HM5401
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM5401 is designed for general purpose applications requiring
high breakdown voltages.
Features
•
High current-emitter breakdown voltage.VCEO=150V(@IC=1mA)
•
Complements to NPN type HM5551
SOT-89
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -160 V
VCES Collector to Emitter Voltage ................................................................................... -150 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current ...................................................................................................... -600 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-160
-150
-5
-
-
-
-
-
-
50
60
50
100
-
Max.
-
-
-
-50
-50
-0.2
-0.5
-1
-1
-
240
-
-
6
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-120V
VEB=-5V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HM5401
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
