HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9525-B
Issued Date : 1998.01.06
Revised Date : 2000.10.01
Page No. : 1/3
HM94
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM94 is designed for application requires high voltage.
Features
•
High voltage: VCEO=400V(min) at IC=1mA
•
High current gain: IC=300mA at 25°C
•
Complementary with HM44
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................. -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ..................................................................................... -400 V
VCEO Collector to Emitter Voltage .................................................................................. -400 V
VEBO Emitter to Base Voltage ............................................................................................ -6 V
IC Collector Current ..................................................................................................... -500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
Min.
-400
-400
6
-
-
-
-
-
-
-
40
50
45
40
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-500
-350
-500
-750
-750
-
300
-
-
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-400V
VEB=-6V
VCE=-400V, VBE=0
IC=-1mA, IB=-0.1mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
