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HMBD2003S 参数 Datasheet PDF下载

HMBD2003S图片预览
型号: HMBD2003S
PDF下载: 下载PDF文件 查看货源
内容描述: 通用二极管编造平面技术 [General purpose diodes fabricated in planar technology]
分类和应用: 二极管
文件页数/大小: 2 页 / 23 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号HMBD2003S的Datasheet PDF文件第2页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6857
Issued Date : 1994.01.25
Revised Date : 2002.10.25
Page No. : 1/2
HMBD2003\C\S
Description
The HMBD2003\C\S are general purpose diodes fabricated in planar
technology, and encapsulated in small plastic SMD SOT-23 package.
Features
Small plastic SMD package
Switching speed: max. 50 nS
General application:
Continuous reverse voltage: Max. 200 V
Repetitive peak reverse voltage: Max. 250 V
Repetitive peak forward current: Max. 625 mA
SOT-23
Absolute Maximum Ratings
(Ta=25°C)
Characteristic
HMBD2003 Repetitive Peak Reverse Voltage
HMBD2003C Repetitive Peak Reverse Voltage
HMBD2003S Repetitive Peak Reverse Voltage
HMBD2003 Continuous reverse voltage
HMBD2003C Continuous reverse voltage
HMBD2003S Continuous reverse voltage
Forward Continuous Current at Ta=25°C
Repetitive Peak Forward Current at Ta=25°C
Surge Forward Current at t =1mS, Ta=25°C
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VRRM
Value
250
250
250
200
200
200
225
625
1
250 Max
150
-65~+150
Unit
V
VR
lF
IFRM
IFSM
PD
Tj
Tstg
V
mA
mA
A
mV
°C
°C
Characteristics
(Ta=25°C)
Characteristic
Forward Voltage
HMBD2003 Reverse Current
HMBD2003C Reverse Current
HMBD2003S Reverse Current
Total Capacitance
Reverse Recovery Time
BV
R
Symbol
VF(1)
VF(2)
IR
CT
Trr
BV
R
Condition
IF=100mA
IF=200mA
VR=200V
VR=200V
VR=200V
VR=0V, f=1MHz
IF=30mA to IR=30mA
RL=100Ω measured at
IR=3mA
IR=100uA
Min
-
-
-
-
-
5
50
250
Max
1
1.25
100
100
100
-
-
-
Unit
V
nA
pF
nS
V
HMBD2003, HMBD2003C, HMBD2003S
HSMC Product Specification