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HMBD2004S 参数 Datasheet PDF下载

HMBD2004S图片预览
型号: HMBD2004S
PDF下载: 下载PDF文件 查看货源
内容描述: 通用二极管编造平面tehnology [General purpose diodes fabricated in planar tehnology]
分类和应用: 二极管
文件页数/大小: 2 页 / 22 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号HMBD2004S的Datasheet PDF文件第2页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6858
Issued Date : 1994.01.25
Revised Date : 2002.10.25
Page No. : 1/2
HMBD2004\C\S
Description
The HMBD2004\C\S are general purpose diodes fabricated in planar
technology, and encapsulated in small plastic SMD SOT-23 package.
Features
Small plastic SMD package
Switching speed: max. 50 nS
General application:
Continuous reverse voltage: Max. 240 V
Repetitive peak reverse voltage: Max. 300 V
Repetitive peak forward current: Max. 625 mA
SOT-23
Absolute Maximum Ratings
(Ta=25°C)
Characteristic
HMBD2004 Repetitive Peak Reverse Voltage
HMBD2004C Repetitive Peak Reverse Voltage
HMBD2004S Repetitive Peak Reverse Voltage
HMBD2004 Continuous reverse voltage
HMBD2004C Continuous reverse voltage
HMBD2004S Continuous reverse voltage
Forward Continuous Current at Ta=25°C
Repetitive Peak Forward Current at Ta=25°C
Surge Forward Current at t =1mS, Ta=25°C
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VRRM
Value
300
300
300
240
240
240
225
625
1
250 Max
150
-65~+150
Unit
V
VR
lF
IFRM
IFSM
PD
Tj
Tstg
V
mA
mA
A
mV
°C
°C
Characteristics
(Ta=25°C)
Characteristic
Forward Voltage
HMBD2004 Reverse Current
HMBD2004C Reverse Current
HMBD2004S Reverse Current
Total Capacitance
Reverse Recovery Time
BV
R
Symbol
VF
IR
CT
Trr
BV
R
Condition
IF=100mA
VR=240V
VR=240V
VR=240V
VR=0V, f=1MHz
IF=30mA to IR=30mA
RL=100Ω measured at
IR=3mA
IR=100uA
Min
-
-
-
-
5
50
250
Max
1
100
100
100
-
-
-
Unit
V
nA
pF
nS
V
HMBD2004, HMBD2004C, HMBD2004S
HSMC Product Specification