HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6538
Issued Date : 1997.01.18
Revised Date : 2002.10.25
Page No. : 1/3
HMBD914
HIGH-SPEED SWITCHING DIODE
Description
The HMBD914 is designed for high-speed switching application in hybrid
thick-and thin-film circuits. The device is manufactured by the silicon
epitaxial planar process and packed in plastic surface mount package.
SOT-23
Features
•
Small SMD Package (SOT-23)
•
Ultra-high Speed
•
Low Forward Voltage
•
Fast Reverse Recovery Time
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................................ -65 ~ +150
°C
Junction Temperature ................................................................................................................ +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
Repetitive Peak Reverse Voltage.................................................................................................... 85 V
VR Coinuous Reverse Voltage........................................................................................................ 70 V
IF Continuous Forward Current................................................................................................... 200 mA
IFSM Peak Forward Surge Current............................................................................................. 500 mA
IFSM Non-Repetitive Peak Forward Current t=1uS ........................................................................... 4 A
IFSM Non-Repetitive Peak Forward Current t=1mS .......................................................................... 1 A
IFSM Non-Repetitive Peak Forward Current t=1S .......................................................................... 0.5 A
Characteristics
(Ta=25°C)
Characteristic
Forward Voltage
Reverse Breakdown Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
Symbol
VF
VR
IR(1)
IR(2)
Cd
Trr
Condition
IF=10mA
IR=100uA
VR=25V
VR=75V
VR=0, F=1MHz
IF=IR=10mA, RL=100Ω
Measured at IR=1mA
Min
-
100
-
-
-
-
Max
1
25
5
1.5
4
Unit
V
V
nA
uA
pF
ns
HMBD914
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
