HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6818
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 1/4
HMBT4403
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT4403 is designed for general purpose applications
requiring high breakdown voltages.
Absolute Maximum Ratings
SOT-23
•
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -40 V
VCEO Collector to Emitter Voltage..................................................................................... -40 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-40
-40
-5
-
-
-
-
-
30
60
100
100
20
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-400
-750
-950
-1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
nA
mV
mV
mV
V
Test Conditions
IC=-100uA
IC=-1mA
IE=-100uA
VCE=-35V, VBE=-0.4V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HMBT4403
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
