HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6812
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 1/3
HMBT8050
NPN EPITAXIAL TRANSISTOR
Description
The HMBT8050 is designed for general purpose amplifier
applications.
Features
•
High DC Current hFE=150-400 at IC=150mA
•
Complementary to HMBT8550
SOT-23
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 25 V
VCEO Collector to Emitter Voltage...................................................................................... 20 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current ....................................................................................................... 700 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
25
20
5
-
-
-
150
150
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1
500
1
500
-
10
Unit
V
V
V
uA
mV
V
MHz
pF
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V. IE=0
IC=500mA, IB=50mA
VCE=1V, IC=150mA
VCE=1V, IC=150mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE
Rank
Range
D9D
150-300
D9E
250-500
HMBT8050
HSMC Product Specification