HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200212
Issued Date : 2002.07.01
Revised Date : 2004.09.08
Page No. : 1/5
HMBT9014
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT9014 is designed for use in pre-amplifier of low level and low noise.
Features
•
High Total Power Dissipation (P
D
: 225mW)
•
Complementary to HMBT9015
•
High hFE and Good Linearity
SOT-23
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................... 225 mW
•
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 50 V
V
CEO
Collector to Emitter Voltage ........................................................................................................................ 45 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 5 V
I
C
Collector Current ........................................................................................................................................ 100 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
V
BE(on)
*h
FE
Cob
f
T
Min.
50
45
5
-
-
-
-
0.58
100
-
150
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
2.20
270
Max.
-
-
-
50
50
0.3
1
0.7
1000
3.5
-
pF
MHz
Unit
V
V
V
nA
nA
V
V
V
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=1mA
V
CB
=10V, f=1MHz, I
E
=0
V
CE
=5V, I
C
=10mA
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification on hFE
Rank (Marking Code)
Range
B (C4B)
100-300
C (C4C)
200-600
D (C4D)
400-1000
HMBT9014
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
