HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6848
Issued Date : 1994.07.29
Revised Date : 2004.08.17
Page No. : 1/4
HMBTA42
NPN EPITACIAL PLANAR TRANSISTOR
Description
High Voltage Transistor
Absolute Maximum Ratings
SOT-23
•
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°C
Junction Temperature................................................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C)............................................................................................................... 225 mW
•
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ......................................................................................................................... 300 V
V
CEO
Collector to Emitter Voltage...................................................................................................................... 300 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 6 V
I
C
Collector Current ........................................................................................................................................ 500 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE1
*h
FE2
*h
FE3
f
T
Cob
Min.
300
300
6
-
-
-
-
25
40
40
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
900
-
-
-
-
3
MHz
pF
Unit
V
V
V
nA
nA
mV
mV
I
C
=100uA
I
C
=1mA
I
E
=10uA
V
CB
=200V
V
EB
=6V
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
I
C
=10mA, V
CE
=20V, f=100MHz
V
CB
=20V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HMBTA42
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
