HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6803
Issued Date : 1995.12.28
Revised Date : 2002.10.28
Page No. : 1/12
HMBZ5221B
thru
HMBZ5257B
Thermal Characteristics
ZENER DIODES
SOT-23
Characteristics
Total Device Dissipation FR-5 Board
TA=25°C, Derate above 25°C
Total Device Dissipation
Alumina Substrate**TA=25°C, Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
PD
RθJA
Tj, Tstg
Max
225
1.8
300
2.4
417
-55 to +150
Unit
mW
mW/°C
mW
mW/°C
°C/W
°C
*FR-5 - 1.0×0.75×0.062 in. **Alumina - 0.4×0.3×0.024 in. 99.5% alumina.
Electrical Characteristic
(V
F
=0.9V Max @I
F
=10mA for all types.)
Device
HMBZ52221B
HMBZ5222B
HMBZ5223B
HMBZ5225B
HMBZ5226B
HMBZ5227B
HMBZ5228B
HMBZ5229B
HMBZ5230B
HMBZ5231B
HMBZ5232B
HMBZ5233B
HMBZ5234B
HMBZ5235B
HMBZ5236B
HMBZ5237B
HMBZ5238B
HMBZ5239B
HMBZ5240B
HMBZ5241B
HMBZ5242B
HMBZ5243B
HMBZ5244B
HMBZ52XXB Series
Marking
Code
18A
18B
18C
18E
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
8M
8N
8P
8Q
8R
8S
8T
8U
Test
Current
IZT(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
Zener
Voltage
VZ(V)
2.4
±5%
2.5
±5%
2.7
±5%
3.0
±5%
3.3
±5%
3.6
±5%
3.9
±5%
4.3
±5%
4.7
±5%
5.1
±5%
5.6
±5%
6.0
±5%
6.2
±5%
6.8
±5%
7.5
±5%
8.2
±5%
8.7
±5%
9.1
±5%
10
±5%
11
±5%
12
±5%
13
±5%
14
±5%
ZZK
IZ=0.25mA
ΩMax
1200
1250
1300
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
ZZT
IZ=IZT
ΩMax
30
30
30
29
28
24
23
22
19
17
11
7.0
7.0
5.0
6.0
8.0
8.0
10
17
22
30
13
15
Max. Reverse
Current
IR(uA) @VR(V)
100
1.0
100
1.0
75
1.0
50
1.0
25
1.0
15
1.0
10
1.0
5.0
1.0
5.0
2.0
5.0
2.0
5.0
3.0
5.0
3.5
5.0
4.0
3.0
5.0
3.0
6.0
3.0
6.5
3.0
6.5
3.0
7.0
3.0
8.0
2.0
8.4
1.0
9.1
0.5
9.9
0.1
10
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
