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HMH2369 参数 Datasheet PDF下载

HMH2369图片预览
型号: HMH2369
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 4 页 / 46 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号HMH2369的Datasheet PDF文件第2页浏览型号HMH2369的Datasheet PDF文件第3页浏览型号HMH2369的Datasheet PDF文件第4页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 1/4
HPH2369
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPH2369 is designed for general purpose switching and
amplifier applications.
Features
Low Collector Saturation Voltage
High speed switching Transistor
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCES Collector to Emitter Voltage ...................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 15 V
VEBO Emitter to Base Voltage ........................................................................................... 4.5 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVCES
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
fT
Cob
Min.
40
15
40
4.5
-
-
-
-
-
-
700
-
40
20
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
80
-
-
-
Max.
-
-
-
-
400
300
100
250
300
600
850
1.5
120
-
-
4
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IC=10uA, VBE=0
IE=10uA, IC=0
VCB=20V, IE=0
VCE=25V, VBE=0
VEB=2V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=0.3mA
IC=100mA, IB=10mA
IC=10mA, IB=1mA
IC=100mA, IB=1mA
IC=10mA, VCE=1V
IC=100mA, VCE=2V
IC=10mA, VCE=10V, f=100MHZ
VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HPH2369
HSMC Product Specification
MHz
pF