HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200210
Issued Date : 2001.01.01
Revised Date : 2002.05.08
Page No. : 1/3
HMJE13003
NPN EPITAXIAL PLANAR TRANSISTOR
Description
•
High Voltage, High Speed Power Switch
•
Switch Regulators
•
PWM Inverters and Motor Controls
•
Solenoid and Relay Drivers
•
Deflection Circuits
TO-126
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
•
Maximum Voltages and Currents (Ta=25°C)
VCEX Collector to Emitter Voltage .................................................................................... 700 V
VCEO Collector to Emitter Voltage .................................................................................... 400 V
VEBO Emitter to Base Voltage .............................................................................................. 9 V
IC Collector Current ........................................................................................ Continuous 1.5 A
IB Base Current ............................................................................................. Continuous 0.75 A
Characteristics
(Ta=25°C)
Symbol
BVCEX
BVCEO
IEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(sat)
*hFE1
*hFE2
Min.
700
400
-
-
-
-
-
-
-
8
5
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
1
1
500
1
3
1
1.2
40
25
Unit
V
V
mA
mA
mV
V
V
V
V
Test Conditions
IC=1mA, VBE(off)=1.5V
IC=10mA
VEB=9V
VCE=700V, VBE(off)=1.5V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=0.5A, VCE=2V
IC=1A, VCE=2V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HMJE13003
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
