HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2006.07.04
Page No. : 1/6
HMJE13009A
12 AMPERE NPN SILICON POWER TRANSISTOR
Description
The HMJE13009A is designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits.
TO-220AB
Specification Features
•
V
CEO(sus)
=400V
•
Reverse Bias SOA with Inductive Loads @T
C
=100°C
•
Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C…tc@8A, 100°C is 120ns(Typ.)
•
700V Blocking Capability
•
SOA and Switching Applications Information
Absolute Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak*
Base Current-Continuous
Base Current-Peak*
Emitter Current-Continuous
Emitter Current-Peak
Total Power Dissipation@T
A
=25°C
Derate above 25°C
Total Power Dissipation@T
C
=25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
V
CEO(sus)
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
TJ, Tstg
Max.
400
700
9
12
24
6
12
18
36
2
16
100
800
-65 to +150
Unit
Vdc
Vdc
Vd
Adc
Adc
Adc
Adc
Adc
Adc
Watts
mW/°C
Watts
mW/°C
°C
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
Symbol
R
θJC
R
θJA
T
L
Max.
1.25
62.5
275
Unit
°C/W
°C/W
°C
HMJE13009A
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
