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HMJE3055T 参数 Datasheet PDF下载

HMJE3055T图片预览
型号: HMJE3055T
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 38 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号HMJE3055T的Datasheet PDF文件第2页浏览型号HMJE3055T的Datasheet PDF文件第3页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6737-A
Issued Date : 1993.09.24
Revised Date : 1999.08.01
Page No. : 1/3
HMJE3055T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE3055T is designed for general purpose of amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25°C)
Maximum Temperature
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ..................................................................................... 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 75 W
Total Power Dissipation (Ta=25°C) ................................................................................... 0.6 W
Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage ...................................................................................... 70 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ........................................................................................................... 10 A
IB Base Current .................................................................................................................... 6 A
Characteristics
(Ta=25°C)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
ICEX
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
fT
Min.
60
70
5
-
-
-
-
-
-
-
20
5
2
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1.
1.
700
5
1.1
8.0
1.8
100
-
-
Unit
V
V
V
mA
mA
uA
mA
V
V
V
Test Conditions
IC=200mA, IB=0
IC=10mA, IE=0
IE=10mA, IC=0
VCB=70V, IE=0
VCE=70V, VEB(off)=1.5V
VCE=30V, IB=0
VEB=5V, IC=0
IC=4A, IB=400mA
IC=10A, IB=3.3A
IC=4A, VCE=4V
IC=4A, VCE=4V
IC=10A, VCE=4V
VCE=10V, IC=500mA, f=0.5MHz
MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification