HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6318-A
Issued Date : 1996.07.18
Revised Date : 2000.10.01
Page No. : 1/4
HMPS8099
NPN SILICON TRANSISTOR
Description
HMPS8099 is designed for general purpose amplifier applications.
Features
•
Low Collector-Emitter Saturation Voltage
•
HMPS8099 is complementary to HMPS8599
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +125
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 80 V
VCES Collector to Emitter Voltage...................................................................................... 80 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICEO
*hFE1
*hFE2
*hFE3
*VCE(sat)1
*VCE(sat)2
VBE(on)
Min.
80
80
6
-
-
-
100
100
75
-
-
0.6
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
100
300
-
-
0.4
0.3
0.8
Unit
V
V
V
nA
nA
nA
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
VCE=60V, IB=0
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
IC=100mA, IB=5mA
IC=100mA, IB=10mA
IC=10mA, VCE=5V
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
V
V
V
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
