HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6301-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/4
HMPSA05
NPN SILICON TRANSISTOR
Description
Amplifier transistor
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCEO Collector to Emitter Voltage ..................................................................................... 60 V
VEBO Emitter to Base Voltage ............................................................................................. 4 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
60
60
4
-
-
-
-
50
50
100
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.25
1.2
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=60V, IE=0
VCE=60V, IB=0
IC=100mA, IB=10mA
IC=100mA, VCE=1V
IC=10mA, VCE=1V
IC=100mA, VCE=1V
IC=10mA, VCE=2V, f=100MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
