HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6343
Issued Date : 1993.03.24
Revised Date : 2001.05.01
Page No. : 1/4
HMPSA13
NPN SILICON DARLINGTON TRANSISTOR
Description
The HMPSA13 is designed for applications requiring extremely high
current gain at collector to 500mA.
Features
•
High D.C. Current Gain
•
Complementary to HMPSA63
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 600 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCES Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
30
30
10
-
-
-
-
5
10
-
125
-
Typ.
-
-
-
-
-
-
1.0
-
-
50
-
-
Max.
-
-
-
100
100
1.5
-
-
-
-
-
6
Unit
V
V
V
nA
nA
V
V
K
K
K
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=100uA, VBE=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
IC=100mA, IB=0.1mA
IC=500mA, IB=0.5mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE3
Rank
SUN
N
HMPSA13
VCE(sat)2
<1.2V
VCE(sat)2
hFE3
>20K
hFE3
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
