HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6308-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/3
HMPSA26
NPN SILICON TRANSISTOR
Description
The HMPSA26 is designed for using in darligton transistor.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 50 V
VCES Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to BASE Voltage .......................................................................................... 10 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
Min.
50
50
10
-
-
-
-
-
10K
10K
Typ.
-
-
-
-
-
-
-
0.6
-
-
Max.
-
-
-
100
500
100
1.5
2
-
-
Unit
V
V
V
nA
nA
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=100uA, VBE=0
IE=10uA, IC=0
VCB=40V, IE=0
VCE=40V, VBE=0
VEB=10V, IC=0
IC=100mA, IB=100uA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
