HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6332
Issued Date : 1995.05.18
Revised Date : 2002.04.11
Page No. : 1/3
HMPSA27
NPN SILICON TRANSISTOR
Description
The HMPSA27 is designed for darlington amplifier high current gain
collector current to 500mA.
Absolute Maximum Ratings
TO-92
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCES Collector to Emitter Voltage ...................................................................................... 60 V
VEBO Collector to Emitter Voltage ...................................................................................... 10 V
IC Collector Current........................................................................................................ 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
ICES
*VCE(sat)
VBE(on)
*hFE1
*hFE2
Min.
60
60
10
-
-
-
-
-
10K
10K
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
1.5
2
-
-
Unit
V
V
V
nA
nA
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=100uA, VBE=0
IE=10uA, IC=0
VCB=50V, IE=0
VEB=10V, IC=0
VCE=50V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HMPSA27
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
