HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6310-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/4
HMPSA55
PNP SILICON TRANSISTOR
Description
The HMPSA55 is designed for using in a amplifier applications.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -60 V
VCEO Collector to Emitter Voltage .................................................................................... -60 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current ..................................................................................................... -500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Min.
-60
-60
-4
-
-
-
-
50
50
50
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.25
-1.2
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-60V, IE=0
VCE=-60V, IB=0
IC=-100mA, IB=-10mA
IC=-100mA, VCE=-1V
IC=-10mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-100mA, VCE=-1V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
