HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6333-B
Issued Date : 1992.11.18
Revised Date : 2000.10.01
Page No. : 1/4
HMPSA64
PNP SILICON TRANSISTOR
Description
The HMPSA64 is designed for application requiring extremely high
current gain at collector currents to 500mA.
Features
•
High D.C Current Gain
•
For Complementary Use with NPN Type HMPSA14
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -30 V
VCEO Collector to Emitter Voltage .................................................................................... -30 V
VEBO Emitter to Base Voltage .......................................................................................... -10 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Min.
-30
-30
-10
-
-
-
-
10
20
125
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-1.5
-2
-
-
-
Unit
V
V
V
nA
nA
V
V
K
K
pF
Test Conditions
IC=-100uA, IE=0
IC=-100uA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VEB=-10V, IC=0
IC=-100mA, IB=-0.1mA
IC=-100mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V
IC=-100mA, VCE=-5V, f=100MHZ
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
