HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6352
Issued Date : 1992.12.15
Revised Date : 2002.04.15
Page No. : 1/4
HMPSA92
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMPSA92 is designed for application as a video output to drive
color CRT, or as a dialer circuit in electronics telephone.
Absolute Maximum Ratings
TO-92
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -300 V
VCEO Collector to Emitter Voltage ................................................................................... -300 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Min.
-300
-300
-5
-
-
-
-
25
40
40
-
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
100
-
-
Max.
-
-
-
-100
-100
-350
-900
-
-
-
-
-
6
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-200V, IE=0
VEB=-3V, IC=0
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-30mA, VCE=-10V
IC=-80mA, VCE=-10V
IC=-10mA, VCE=-20V, f=100MHz
VCB=-20V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE2 & V
CE(sat)
Rank
NS
N
hFE1
>60
>25
hFE2
>80
>40
hFE3
>80
>40
hFE4
>80
-
VCE(sat)
<200mV
<350mV
HMPSA92
HSMC Product Specification