HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 1/4
HPN2369A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPN2369A is designed for general purpose switching and amplifier
applications.
Features
•
Low Collector Saturation Voltage
•
High Speed Switching Transistor
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150
°C
Junction Temperature .................................................................................................. +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .............................................................................................. 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................................... 40 V
VCES Collector to Emitter Voltage..................................................................................................... 40 V
VCEO Collector to Emitter Voltage .................................................................................................... 15 V
VEBO Emitter to Base Voltage ......................................................................................................... 4.5 V
IC Collector Current ..................................................................................................................... 200 mA
ICM Peak Collector Current ......................................................................................................... 300 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
IEBO
ICBO
ICES
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
40
40
4.5
-
-
-
-
-
-
-
700
40
30
20
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
400
200
250
300
500
850
120
-
-
-
4
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
Test Conditions
IC=10uA, IE=0
IC=10uA, VBE=0
IE=10uA, IC=0
VEB=4V, IC=0
VCB=20V, IE=0
VCE=40V, VBE=0
IC=10mA, IB=1mA
IC=30mA, IB=3mA
IC=10mA, IB=10mA
IC=100mA, IB=10mA
IC=10mA, IB=1mA
IC=10mA, VCE=0.35V
IC=30mA, VCE=0.4V
IC=100mA, VCE=1V
IC=10mA, VCE=10V, f=100MHz
VCB=5V, f=1MHz
MHz
pF
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HPN2369A
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
