HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HSP200204
Issued Date : 1998.01.06
Revised Date : 2002.03.26
Page No. : 1/3
HSA733SP
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSA733 is designed for use in driver stage of AF amplifier.
Features
•
High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA)
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -60 V
VCEO Collector to Emitter Voltage..................................................................................... -50 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -100 mA
IB Base Current ............................................................................................................... -20 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
-60
-50
-5
-
-
-
-0.55
90
100
-
Typ.
-
-
-
-
-
-0.18
-0.62
200
180
4.5
Max.
-
-
-
-0.1
-0.1
-0.3
-0.7
600
-
6.0
Unit
V
V
V
uA
uA
V
V
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-60V, IC=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-1mA, VCE=-6V
VCE=-6V, IC=-1mA
IC=-1mA, VCE=-6V
IE=0, VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE1
Rank
Range
R
90-180
Q
135-270
P
200-400
K
300-600
HSA733SP
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
