HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6607
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 1/3
HSB1109
PNP EPITAXIAL PLANAR TRANSISTOR
Features
•
Low frequency high voltage amplifier
•
Complementary pair with HSD1609
Absolute Maximum Ratings
(Ta=25°C)
TO-126ML
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................................................................. 1.25 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -160 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current....................................................................................................... -100 mA
Electrical Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-160
-160
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
5.5
Max.
-
-
-
-10
-2
-1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-140V
IC=-30mA, IB=-3mA
IC=-10mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
D
160-320
HSB1109
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
