HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200111
Issued Date : 2001.12.01
Revised Date : 2005.02.14
Page No. : 1/4
HSB1386A
LOW FREQUENCY TRANSISTOR (-20V, -4A)
Features
•
Low V
CE(sat)
.
V
CE(sat)
=-0.55V(Typ.) (I
C
/I
B
=-4A/-0.1A)
•
Excellent DC current gain characteristics.
TO-92
Structure
Epitaxial planar type PNP silicon transistor
Absolute Maximum Ratings
(T
A
=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (Ta=25
o
C)
Junction Temperature
Storage Temperature
Limits
-30
-20
-6
-4
-10
750
150
-55~+150
Unit
V
V
V
A
A(Pulse)*
mW
o
o
C
C
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*hFE
fT
Cob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter B reakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Min.
-30
-20
-6
-
-
-
82
-
-
-
-
-
-
110
30
-0.5
-0.5
-1
580
-
-
pF
uA
uA
V
Typ. Max.
-
-
-
-
Unit
V
V
I
C
=-1mA
I
C
=-50uA
V
CB
=-20V
V
EB
=-5V
I
C
/I
B
=-4A/-0.1A
V
CE
=-2V, IC=-0.5A
MHz V
CE
=-6V, I
E
=50mA, f=30MHz
V
CB
=-20V, I
E
=0A, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
I
C
=-50uA
Classification Of hFE
Rank
Range
P
82-180
Q
120-270
R
180-390
E
370-580
HSB1386A
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
