HSB1426 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6506

Issued Date : 1994.03.25

Revised Date : 2002.02.08

Page No. : 1/3

HSB1426

PNP EPITAXIAL PLANAR TRANSISTOR

Description

DC-DC Converter

Features

•

Low Collector to Emitter Saturation Voltage

TO-92

Absolute Maximum Ratings

•

Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................ 750 mW

•

Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ -20 V

VCEO Collector to Emitter Voltage ..................................................................................... -20 V

VEBO Emitter to Base Voltage ............................................................................................. -6 V

IC Collector Current ............................................................................................................. -3 A

Characteristics

(Ta=25°C)

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

*VCE(sat)

*hFE

fT

Cob

Min.

-20

-20

-6

-

-

-

82

-

-

Typ.

-

-

-

-

-

-

-

240

35

Max.

-

-

-

-100

-100

-500

390

-

-

Unit

V

V

V

nA

nA

mV

MHz

pF

Test Conditions

IC=-50uA, IE=0

IC=-1mA, IB=0

IE=-10uA, IC=0

VCB=-20V, IE=0

VEB=-5V, IC=0

IC=-2A, IB=-0.1A

VCE=-2V, IC=-100mA

VCE=-2V, IC=-500mA, f=100MHz

VCB=-10V, IE=0, f=1MHz

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Classification Of hFE1

Rank

Range

P

82-180

Q

120-270

R

180-390

HSB1426

HSMC Product Specification