HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6513-B
Issued Date : 1993.01.15
Revised Date : 2000.10.01
Page No. : 1/4
HSB562
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB562 is designed for general purpose low frequency power
amplifier applications.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 900 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -25 V
VCEO Collector to Emitter Voltage .................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ............................................................................................................ -1 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
-25
-20
-5
-
-
-
85
-
-
Typ.
-
-
-
-
-
-
-
350
38
Max.
-
-
-
-1
-500
-1
240
-
-
Unit
V
V
V
uA
mV
V
MHz
pF
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
IC=-800mA, IB=-80mA
IC=-500mA, VCE=-2V
VCE=-2V, IC=-500mA
VCE=-2V, IC=-500mA
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE
Rank
Range
B
85-170
C
120-240
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
