HSB647A 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HA200201

Issued Date : 2002.01.01

Revised Date : 2005.02.14

Page No. : 1/4

HSB647A

SILICON PNP EPITAXIAL

Description

Low Frequency Power Amplifier Complementary Pair With HSD667A.

Absolute Maximum Ratings

TO-92

•

Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150

°C

Junction Temperature ..................................................................................................................... 150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (T

A

=25°C) ............................................................................................................... 900 mW

•

Maximum Voltages and Currents (T

A

=25°C)

V

CBO

Collector to Base Voltage ........................................................................................................................ -120 V

V

CEO

Collector to Emitter Voltage ..................................................................................................................... -100 V

V

EBO

Emitter to Base Voltage ............................................................................................................................... -5 V

I

C

Collector Current (DC) ..................................................................................................................................... -1 A

I

CP

Collector Current (Peak) ................................................................................................................................. -2 A

Electrical Characteristics

(T

A

=25°C)

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

*V

CE(sat)

V

BE(on)

*h

FE1

*h

FE2

f

T

Cob

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cutoff Current

Collector to Emitter Saturation Voltage

Base to Emitter Voltage

DC Current Transfer Ratio 1

DC Current Transfer Ratio 2

Gain Bandwidth Product

Collector Output Capacitance

Min. Typ. Max. Unit

-120

-100

-5

-

-

-

60

30

-

-

-

-

-

-

-

-

-

-

140

20

-

-

-

-10

-1

-1.5

200

-

-

-

pF

V

V

V

uA

V

V

Test Conditions

I

C

=-100uA, I

E

=0

I

C

=-1mA, R

BE

=∞

I

E

=-10uA, I

C

=0

V

CB

=-100V, I

E

=0

I

C

=-500mA, I

B

=-50mA

V

CE

=-5V, I

C

=-150mA

V

CE

=-5V, I

C

=-150mA

V

CE

=-5V, I

C

=-500mA

MHz V

CE

=-5V, I

C

=-150mA

V

CB

=-10V, f=1MHz, I

E

=0

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Classification of hFE1

Rank

Range

B

60-120

C

100-200

HSB647A

HSMC Product Specification