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HSB649A 参数 Datasheet PDF下载

HSB649A图片预览
型号: HSB649A
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [SILICON PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 35 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号HSB649A的Datasheet PDF文件第2页浏览型号HSB649A的Datasheet PDF文件第3页  
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6629
Issued Date : 1995.12.18
Revised Date : 2002.04.03
Page No. : 1/3
HSB649A
SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier complementary pair with HSD669A.
Absolute Maximum Ratings
(Ta=25°C)
TO-126ML
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation ........................................................................................................ 1 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -180 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC) .................................................................................................. -1.5 A
IC Collector Current (Pulse) ................................................................................................ -3 A
Electrical Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-180
-160
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-160V, IE=0
IC=-500mA, IB=-50mA
IC=-150mA, VCE=-5V
IC=-150mA, VCE=-5V
IC=-500mA, VCE=-5V
IC=-150mA ,VCE=-5V
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
HSB649A
HSMC Product Specification