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HSB857D 参数 Datasheet PDF下载

HSB857D图片预览
型号: HSB857D
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面晶体管 [PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 4 页 / 38 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号HSB857D的Datasheet PDF文件第1页浏览型号HSB857D的Datasheet PDF文件第3页浏览型号HSB857D的Datasheet PDF文件第4页  
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
125 C
o
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2002.03.06
Page No. : 2/4
Saturation Voltage & Collector Current
1000
V
CE(sat)
@ I
C
=10I
B
75 C
o
25 C
o
Saturation Voltage (mV)
hFE
100
100
75 C
o
hFE @ V
CE
=3V
125 C
o
25 C
o
10
1
10
100
1000
10000
10
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
V
BE(sat)
@ I
C
=10I
B
Capacitance & Reverse-Biased Voltage
1000
Saturation Voltage (mV)
75 C
1000
25 C
o
o
Capacitance (pF)
100
Cob
125 C
o
100
1
10
100
1000
10000
10
1
10
100
Collector Current-I
C
(mA)
Reverse Biased Voltage (V)
Safe Operating Area
10
PT=1ms
PD - Ta
1.6
1.4
PD(W) , Power Dissipation
Collector Current-I
C
(A)
1.2
1
0.8
0.6
0.4
0.2
1
PT=100ms
PT=1s
0.1
1
10
100
1000
0
0
50
100
o
150
200
Forward Voltage-V
CE
(V)
Ambient Temperature-Ta ( C )
HSB857D
HSMC Product Specification