HSB857J 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HJ200101

Issued Date : 2001.09.01

Revised Date : 2005.07.14

Page No. : 1/4

HSB857J

PNP EPITAXIAL PLANAR TRANSISTOR

Description

Low frequency power amplifier.

Absolute Maximum Ratings

(T

A

=25°C)

TO-252

•

Maximum Temperatures

Storage Temperature ............................................................................................................................. -50~+150

°C

Junction Temperature ................................................................................................................... +150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (T

C

=25°C) ..................................................................................................................... 20 W

•

Maximum Voltages and Currents

BV

CBO

Collector to Base Voltage......................................................................................................................... -60 V

BV

CEO

Collector to Emitter Voltage..................................................................................................................... -50 V

BV

EBO

Emitter to Base Voltage............................................................................................................................. -5 V

I

C

Collector Current .............................................................................................................................................. -3 A

I

C

Collector Current (I

C

Peak)............................................................................................................................ -4.5 A

Electrical Characteristics

(T

A

=25°C)

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

CEO

I

EBO

*V

CE(sat)

*V

BE(sat)

*h

FE

f

T

Min.

-60

-50

-5

-

-

-

-

-

170

-

Typ.

-

-

-

-

-

-

-0.3

-

-

15

Max.

-

-

-

-1

-1

-1

-1

-1.5

400

-

MHz

Unit

V

V

V

uA

uA

uA

V

V

I

C

=-50uA

I

C

=-1mA

I

E

=-50uA

V

CB

=-50V

V

CE

=-40V

V

EB

=-4V

I

C

=-2A, I

B

=-0.2A

I

C

=-2A, I

B

=-0.2A

I

C

=-500mA, V

CE

=-3V

V

CE

=-5V, I

C

=-500mA, f=100MHz

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Test Conditions

HSB857J

HSMC Product Specification