HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6529
Issued Date : 1992.12.16
Revised Date : 2002.10.09
Page No. : 1/4
HSC2240
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Low noise audio amplifier applications
Absolute Maximum Ratings
TO-92
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 150 V
VCEO Collector to Emitter Voltage .................................................................................... 150 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current ....................................................................................................... 100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
150
150
5
-
-
-
500
120
-
-
Typ.
-
-
-
-
-
-
-
-
100
3
Max.
-
-
-
100
100
300
800
400
-
-
Unit
V
V
V
nA
nA
mV
mV
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=120V, IE=0
VEB=5V, IC=0
IB=1mA, IC=10mA
IC=2mA, VCE=6V
VCE=6V, IC=2mA
VCE=6V, IC=1mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE
Rank
Range
Y
120-240
GR
200-400
HSC2240
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
