HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6626-B
Issued Date : 1994.12.07
Revised Date : 2000.10.01
Page No. : 1/3
HSC2682
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Audio frequency power amplifier, high frequency power amplifier.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................... 1.2 W
Total Power Dissipation (Tc=25°C) ...................................................................................... 8 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 180 V
BVCEO Collector to Emitter Voltage................................................................................. 180 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ....................................................................................................... 100 mA
Electrical Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
180
180
5
-
-
-
-
90
100
-
-
Typ.
-
-
-
-
-
120
0.8
-
200
200
-
Max.
-
-
-
1
1
500
1.5
-
320
-
5
Unit
V
V
V
uA
uA
mV
V
Test Conditions
IC=1mA
IC=10mA
IE=10uA
VCB=180V
VEB=3V
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=20mA, VCE=10V
VCB=10V
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE2
Rank
Range
O
100-200
Y
160-320
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
