HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2001.01.01
Page No. : 1/3
HSC3953
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High–definition CRT display video output, wide-band amplifier.
Features
•
High fT: 500MHz
•
High Breakdown Voltage: BVCEO=120Vmin
•
Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................... 1.3 W
Total Power Dissipation (Tc=25°C) ...................................................................................... 8 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 120 V
BVCEO Collector to Emitter Voltage................................................................................. 120 V
BVEBO Emitter to Base Voltage ........................................................................................... 3 V
IC Collector Current ....................................................................................................... 200 mA
Icp Peak Collector Current............................................................................................. 400 mA
Electrical Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Min.
120
120
3
-
-
-
-
60
40
-
Typ.
-
-
-
-
-
-
-
-
-
400
Max.
-
-
-
0.1
0.1
1
1
320
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=120V, IE=0
VEB=2V
IC=30mA, IB=3mA
IC=30mA, IB=3mA
IC=10mA, VCE=10V
IC=100mA, VCE=10V
IC=50mA , VCE=10V
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
Classification Of hFE1
Rank
Range
D
60-120
E
100-200
F
160-320
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
