HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6517
Issued Date : 1995.02.11
Revised Date : 2002.12.16
Page No. : 1/4
HSC945
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC945 is designed for using driver stage of AP amplifier and
low speed switching applications.
Absolute Maximum Ratings
TO-92
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage ...................................................................................... 50 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current ................................................................................................................ 50 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
60
50
5
-
-
-
50
135
150
-
Typ.
-
-
-
-
-
0.1
-
-
-
-
Max.
-
-
-
100
100
0.3
-
600
600
4
Unit
V
V
V
nA
nA
V
Test Conditions
IC=100uA, IE=0
IC=1mA. IB=0
IE=10uA. IC=0
VCB=60V, IE=0
VEB=5V, IB=0
IC=100mA, IB=10mA
VCE=6V, IC=0.1mA
VCE=6V, IC=1mA
VCE=6V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification of hFE2
Rank
Range
Q
135-270
P
200-400
K
300-600
HSC945
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
